MEModern Engineering2996-69732996-6981Art and Design10.61369/ME.2025010024Article晶体转速对提拉法晶体生长系统的数值模拟研究https://artdesignp.com/journal/ME/2/1/10.61369/ME.2025010024李陈哲2025212025-01-20提拉法是制备高质量单晶的关键技术，晶体转速作为影响熔体流动、温度和界面形貌的重要变量。通过数值模拟方法，本文中探究了晶体转速对提拉法晶体生长系统的影响，研究晶体转速对于熔体流动、温度分布、界面形貌的影响关系。研究发现低转速下以自然对流导致固液界面的凸起；中高转速下以强迫对流为主,固液界面逐渐变凹。结果表明，合理的控制晶体转速可以调控固液界面形貌，为晶体生长实验提供了直接有效的的理论分析。提拉法,晶体生长,数值模拟,熔体流动,固液界面

[1]Zhou X M, Huang H L. Numerical simulation of Cz crystal growth in rotating magnetic field with crystal and crucible rotations[J]. Journal of Crystal Growth, 2012, 340(1): 166-170. [2]Chen C, Chen H J, Yan W B, et al. Effect of crucible shape on heat transport and melt-crystal interface during the Kyropoulos sapphire crystal growth[J]. Journal of Crystal Growth, 2014, 38(8): 29-34. [3]Dadzis K, Bönisch P, Sylla L, et al. Validation, verification, and benchmarking of crystal growth simulations[J]. Journal of Crystal Growth, 2017, 474: 171-177. [4]Zhang S T, Li T, Li Z X, et al. Thermal field design of a large-sized SiC using the resistance heating PVT method via simulations[J]. Crystals, 2023, 13(12): 1368. [5]年夫雪.单晶硅直拉法生长工艺的数值模拟[D].上海大学,2017. [6]Kotrla M. Numerical simulations in the theory of crystal growth[J]. Computer Physics Communications, 1996, 97(1-2): 82-100. [7]Bogdanov M, Ofengeim D K, Zhmakin A. Industrial challenges for numerical simulation of crystal growth[J]. Central European Journal of Physics, 2004, 2: 183-203. [8]Meng D L, Wang Y M, Xue H, et al. Stress simulation of 6-inch SiC single crystal[J]. Vacuum, 2023, 213: 31-36. [9]Lu S O, Chen H Y, Hang W, et al. Numerical analysis of the dislocation density in n-type 4H-SiC[J]. CrystEngComm, 2023, 25(26): 3718-3725. [10]张梦宇.大尺寸直拉法单晶硅生长过程的控氧研究[D].昆明理工大学,2023.